Santa Clara, Calif. — IXYS Corp. has released a new generation of fast 300-V insulated gate bipolar transistors (IGBTs) built with the IXYS HDMOS IGBT process. The five new products — the IXGH42N30C3, ...
Mitsubishi Electric has announced a new generation of 1.2kV IGBT (insulated gate bipolar transistor) modules that, it says, ...
Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of ten new models of its industrial-use NX-type 1.2kV insulated gate bipolar transistor (IGBT) module ...
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