Freescale Semiconductor has reinforced its commitment to the commercial aerospace market with the introduction of a high-performance laterally diffused metal oxide semiconductor (LDMOS) RF power ...
Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...
Power-Amplifier (PA) and base-station manufacturers are faced with a series of similar problems. They both have a common interest in keeping base stations cool and minimizing cost. And they each have ...
Seeing the advantages of the new compound semiconductor material in the microwave domain, several proponents of GaN RF transistors have emerged. Their dedicated efforts over the last few years are ...
MIAMI, June 20, 2017 (GLOBE NEWSWIRE) -- IMPI ANNUAL MICROWAVE POWER SYMPOSIUM -- NXP Semiconductors N.V. (NASDAQ:NXPI), the number one supplier of RF power transistors, today announced the industry’s ...
Freescale Semiconductor has introduced a 50V laterally diffused MOS (LDMOS) RF power transistor designed to deliver 50 percent higher output power than other UHF TV broadcast solutions. The ...
AUSTIN, Texas--(BUSINESS WIRE)--Freescale Semiconductor (NYSE: FSL), a global leader in radio frequency (RF) power transistors, today announced the availability of 11 new commercial RF power LDMOS ...
MONTREAL--(BUSINESS WIRE)--Addressing market demand for RF power devices featuring enhanced ruggedness and wideband operation over a broad frequency range, Freescale Semiconductor (NYSE: FSL) ...
Demand is increasing for power amplifier chips and other RF devices for 5G base stations, setting the stage for a showdown among different companies and technologies. The power amplifier device is a ...
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